1、基本信息

姓名：安炜

职务：预科物理

职称：副教授

办公地点：410

电话：82339427

电子邮件：anwei@buaa.edu.cn

个人主页：

2、教育背景：2010.9至2016.1北京大学物理学院博士毕业

3、工作经历：2016.3至今 北京航空航天大学中法工程师学院

4、主讲课程：电学实验、光学实验、习题课等

5、研究领域方向：凝聚态物理第一性原理计算

6、代表性研究成果（论文、论著、专利等）

l Wei An, Feng Wu, Hong Jiang, G.-S Tian, and Xinzheng Li“Systematic investigation on the topological property of layered GaS and GaSeunder strain”,The Journal of Chemical Physics,141, 084701 (2014)  

lAN Wei, LIU Tianhui, WANG Chunhai, DIAO Chuanling,LUO Nengneng, LIU Yong, QI Zeming, SHAO Tao, WANG Yuyin, JIAO Huan, TIAN Guangshan,JING Xiping “Assignment for Vibrational Spectra of BaTiO3 Ferroelectric CeramicBased on the First-Principles Calculation”,Acta Phys. -Chim. Sin.2015,31(X)，0001-0009

lYang, F.; An, W.; Zhuang,W.; Tian, G.-S. & Jing, X.-P. “Energy transfer from Eu2+ to Mn2+ inM5(PO4)3Cl (M=Ca, Sr)”,Journal of Luminescence ,146, 269 - 274(2014)

lYang, F.; An, W.; Wei,H.-W.; Chen, G.; Zhuang, W. & Jing, X.-P. “Comparison of thephotoluminescence properties of Eu2+, Mn2+ co-doped M5(PO4)3Cl (M=Ca, Sr, Ba)”,Journal of Alloys and Compounds ,590, 535 - 540(2014)

lJiaming wang, Fujun Xu,Xia Zhang, Wei An,et al. "Evidence of Type-II Band Alignmentin III-nitride Semiconductors: Experimental and theoretical investigation forIn0.17Al0.83N/GaN heterostructures" ,Scientific Reports, 4, 6521(2014)